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NT5DS64M8DS-5TI

Part No NT5DS64M8DS-5TI
Manufacturer NANYA
Catalog DDR
Description DDR-400 64Mx8
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944115-NT5DS64M8DS-5TI
Series *
Ultra Librarian 3D Model Ultra Librarian NT5DS64M8DS-5TI CAD Model

Description

The NT5DS64M8DS-5TI is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip manufactured by Nanya Technology. It is designed for applications requiring high-speed data transfer rates.

Applications:

  • Desktop and laptop computers
  • Graphics cards
  • Networking devices (routers, switches)
  • Embedded systems
  • Gaming consoles

Features:

  • Capacity: 512Mb (64M x 8)
  • Data Rate: DDR (Double Data Rate)
  • Clock Frequency: The "-5TI" likely indicates a specific speed grade. Research suggests a correlation to 200MHz (DDR400).
  • Voltage: Typically 2.5V
  • Interface: Standard DDR SDRAM interface
  • Operating Temperature: Standard commercial operating temperature range
  • Package: TSOP (Thin Small Outline Package) or FBGA (Fine-Pitch Ball Grid Array)

Benefits:

  • High Bandwidth: DDR technology provides faster data transfer rates.
  • Improved Performance: Enhances system responsiveness.
  • Lower Power Consumption: Operates at 2.5V for improved energy efficiency.
  • Compact Size: Surface-mount packaging allows for efficient use of board space.
  • Reliability: Nanya is a reputable memory manufacturer.

Additional Details:

The NT5DS64M8DS-5TI complies with JEDEC standards for DDR SDRAM. Its 64M x 8 organization means the memory is structured as 64 million memory locations, each holding 8 bits of data. The "-5TI" suffix denotes specific speed and timing characteristics. Consult the Nanya datasheet for detailed timing specifications such as CAS latency, RAS-to-CAS delay, and precharge time. DDR SDRAM provides a significant performance boost over traditional SDRAM by transferring data on both the rising and falling edges of the clock signal. This part is suitable for a wide range of applications where high bandwidth and low latency are important factors.

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