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Same model may have multiple batches, images only for reference.
LM3086J
Same model may have multiple batches, images only for reference.

LM3086J

Part No LM3086J
Manufacturer National Semiconductor (TI)
Catalog RF Transistors (BJT)
Description TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr National Semiconductor (TI)
Package Bulk
Product Status Active
Transistor Type 5 NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 550MHz
Noise Figure (dB Typ @ f) 3.25dB @ 1kHz
Power - Max 300mW
Current - Collector (Ic) (Max) 50mA
Temperature Range - Operating -40°C ~ 85°C
Mounting Type Through Hole
Package / Case 14-CDIP (0.300", 7.62mm)
Supplier Device Package 14-CERDIP
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 182958-LM3086J
Ultra Librarian 3D Model Ultra Librarian LM3086J CAD Model

Description

The 182958-LM3086J is a bipolar RF transistor from National Semiconductor (TI).

  • Maximum Power: 300mW
  • Maximum Voltage Breakdown: 15V
  • Maximum Collector Current: 50mA
  • Transistor Type: 5 NPN
  • Frequency Transition: 550MHz
  • Noise Figure: 3.25dB @ 1kHz
  • Package Type: Through hole, 14-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 14-CERDIP
  • Operating Temperature Range: -40°C to 85°C

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