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2SC2223-T1B-A/JM

Part No 2SC2223-T1B-A/JM
Manufacturer NEC
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Manufacturer NEC
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815210-2SC2223-T1B-A/JM
Ultra Librarian 3D Model Ultra Librarian 2SC2223-T1B-A/JM CAD Model

Description

The 2SC2223 is an NPN epitaxial silicon transistor manufactured by NEC (now Renesas Electronics). It is designed for general-purpose amplification and switching applications. This transistor offers good linearity and gain characteristics, making it suitable for various analog and digital circuits.

Applications:

  • Audio amplifiers
  • Switching circuits
  • Oscillators
  • Driver stages
  • General-purpose amplification

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • High transition frequency (fT)
  • Small signal amplification
  • Lead-free package

Benefits:

  • Improved signal amplification
  • Efficient switching performance
  • Suitable for high-frequency circuits
  • Versatile for various applications
  • Environmentally friendly due to lead-free construction

Specifications:

The 2SC2223 transistor typically has a collector-emitter voltage (VCEO) rating of 50V and a collector current (IC) rating of 150mA. The current gain (hFE) is typically between 100 and 400. The transition frequency (fT) is typically around 180 MHz. The saturation voltage (VCE(sat)) is usually less than 0.3V. It comes in a small SOT-23 or similar surface-mount package. It's designed for low-power applications. The transistor's high hFE allows for efficient amplification of small signals. The low saturation voltage minimizes power dissipation in switching applications. It is suitable for use in both analog and digital circuits. The transistor is often used in pre-amplifier stages. The operating temperature range is typically from -55°C to +150°C. The specific hFE range and other parameters should be confirmed from the manufacturer's datasheet for the specific part number suffix (e.g., -T1B-A/JM).

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