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2N7002E,215 NXP 2N7002E,215 Real Image
2N7002E,215 NXP 2N7002E,215 Real Image
Same model may have multiple batches, images only for reference.

2N7002E,215

Part No 2N7002E,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 385MA TO236AB
Datasheet
2N7002E,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series TrenchMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.69 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number 2N7002
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1232742-2N7002E,215
Ultra Librarian 3D Model Ultra Librarian 2N7002E,215 CAD Model

Description

The 1232742-2N7002E,215 is a MOSFET transistor from Nexperia USA Inc.

  • Series: TrenchMOS™
  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Channel Type: N-channel
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 385mA @ 25°C
  • On-Resistance: 3Ω @ 500mA and 10V
  • Power Dissipation: 830mW
  • Mounting Type: Surface mountable
  • Package: TO-236-3, SC-59, SOT-23-3
  • Gate Charge: 0.69nC @ 10V
  • Input Capacitance: 50pF @ 10V
  • Temperature Range: -55°C to 150°C
  • Status: Obsolete
  • Standard Package: 3,000 pieces

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