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Same model may have multiple batches, images only for reference.
BF820-QVL
Same model may have multiple batches, images only for reference.

BF820-QVL

Part No BF820-QVL
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description BF820-Q/SOT23/TO-236AB
Datasheet
BF820-QVL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 20V
Power - Max 250 mW
Frequency - Transition 60MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Standard Package 10,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1208942-BF820-QVL
Ultra Librarian 3D Model Ultra Librarian BF820-QVL CAD Model

Description

The 1208942-BF820-QVL is a NPN bipolar transistor designed for use in discrete semiconductor applications.

  • Automotive Series: AEC-Q101 compliant
  • Maximum Power: 250mW
  • Maximum Collector-Emitter Breakdown Voltage: 300V
  • Maximum Collector Current: 50mA
  • Vce Saturation: 600mV @ 5mA base current and 30mA collector current
  • Collector Cutoff Current: 10nA
  • DC Current Gain: 50 @ 25mA collector current and 20V collector-emitter voltage

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