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Same model may have multiple batches, images only for reference.
BUK6207-55C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK6207-55C,118

Part No BUK6207-55C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A DPAK
Datasheet
BUK6207-55C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 5160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1025140-BUK6207-55C,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK6207-55C,118 CAD Model

Description

The Nexperia USA Inc. BUK6207-55C,118 MOSFET is a reliable and efficient solution for your semiconductor needs.

  • Manufacturer: Nexperia USA Inc.
  • Popularity: Medium
  • Channel Type: N-Channel
  • Supply and Demand: Sufficient
  • Power Dissipation: 158W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Product Category: Discrete Semiconductor Products
  • Product Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Case: DPAK
  • Maximum Rds On @ Id, Vgs: 7.8 mOhm @ 25A, 10V

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