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Same model may have multiple batches, images only for reference.
BC847QASZ Real Image
Same model may have multiple batches, images only for reference.

BC847QASZ

Part No BC847QASZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A DFN1010B-6 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6
Datasheet
BC847QASZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 350mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Case / Package 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Base Product Number BC847
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 568-12527-2,1727-2244-6,568-12527-6,568-12527-2-ND,568-12527-1-ND,1727-2244-2,934068722147,1727-2244-1,568-12527-6-ND,568-12527-1
Standard Package 5,000
Win Source Part Number 1325638-BC847QASZ
Ultra Librarian 3D Model Ultra Librarian BC847QASZ CAD Model

Description

The BC847QASZ is a dual NPN bipolar transistor array manufactured by Nexperia USA Inc.

  • Maximum Power: 350mW
  • Voltage Collector Emitter Breakdown: 45V
  • DC Current Gain: 200 @ 2mA and 5V
  • Frequency Transition: 100MHz
  • Package: DFN1010B-6
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1269 $50.1255
960+ $0.1042 $100.0320
1,490+ $0.1009 $150.3410
2,050+ $0.0977 $200.2850
2,650+ $0.0944 $250.1600
3,550+ $0.0846 $300.3300
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