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Same model may have multiple batches, images only for reference.
PSMN8R0-80YLX Real Image
Same model may have multiple batches, images only for reference.

PSMN8R0-80YLX

Part No PSMN8R0-80YLX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A LFPAK56 / N-Channel 80 V 100A (Ta) 238W (Ta) Surface Mount LFPAK56, Power-SO8
Datasheet
PSMN8R0-80YLX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8167 pF @ 25 V
Power Dissipation (Max) 238W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Case / Package SC-100, SOT-669
Base Product Number PSMN8R0
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 934069898115
Standard Package 1,500
Win Source Part Number 1324125-PSMN8R0-80YLX
Ultra Librarian 3D Model Ultra Librarian PSMN8R0-80YLX CAD Model

Description

The PSMN8R0-80YLX is an N-channel MOSFET from Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Category: discrete semiconductor product
  • Drain-to-Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 100A
  • Maximum On-Resistance (Rds On): 8mOhm @ 25A, 10V
  • Gate Threshold Voltage (Vgs(th)): 2.1V @ 1mA
  • Power Dissipation: 238W
  • Gate Charge (Qg): 104nC @ 10V
  • Input Capacitance (Ciss): 8167pF @ 25V
  • Maximum Voltage (Vgs): ±20V
  • Mounting: surface-mount device (SMD)
  • Package: reel
  • Package/Case: SC-100, SOT-669

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