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Same model may have multiple batches, images only for reference.
PBLS4001D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS4001D,115

Part No PBLS4001D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Datasheet
PBLS4001D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 40V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V / 300 @ 100mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 150MHz
Maximum Power Dissipation 600mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086370-PBLS4001D,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBLS4001D,115 CAD Model

Description

The Nexperia USA Inc. PBLS4001D,115 is a discrete semiconductor product designed for various applications.

  • Base Resistor: 2.2k ohms
  • Maximum Current Collector: 100mA and 700mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V and 40V
  • Max Vce (sat): 150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
  • Collector Cut-Off Current(max): 1μA and 100nA
  • Typical Gain (hFE) (Min): 30 @ 20mA, 5V / 300 @ 100mA, 5V
  • Maximum Power Dissipation: 600mW

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