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Same model may have multiple batches, images only for reference.
PBLS4003D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS4003D,115

Part No PBLS4003D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Datasheet
PBLS4003D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 40V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V / 300 @ 100mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 150MHz
Maximum Power Dissipation 600mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086374-PBLS4003D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS4003D,115 CAD Model

Description

The Nexperia PBLS4003D,115 is a 1 NPN pre-biased and 1 PNP transistor polarity integrated circuit.

  • Frequency - Transition: 150MHz
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • Maximum Current Collector: 100mA, 700mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 40V
  • Max Vce (sat): 150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
  • Collector Cut-Off Current(Max): 1μA, 100nA
  • Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 300 @ 100mA, 5V
  • Package: 6-TSOP
  • Maximum Power Dissipation: 600mW

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