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Same model may have multiple batches, images only for reference.
PBLS6021D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS6021D,115

Part No PBLS6021D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSOP
Datasheet
PBLS6021D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 60V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V / 140 @ 1A, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 150MHz
Maximum Power Dissipation 760mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086383-PBLS6021D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS6021D,115 CAD Model

Description

The PBLS6021D,115 is a pre-biased NPN and PNP transistor manufactured by Nexperia.

  • Maximum Collector Current: 100mA and 1.5A
  • Collector-Emitter Breakdown Voltage: 50V and 60V
  • Typical Gain: 30 @ 20mA, 5V and 140 @ 1A, 2V
  • Maximum Power Dissipation: 760mW
  • Application: Discrete Semiconductor Products
  • Suitable Applications: Switching, amplification, and voltage regulation
  • Mounting: Reel and Surface-Mountable
  • Frequency Transition: 150MHz
  • Collector-Emitter Saturation Voltage: 150mV @ 500μA, 10mA and 260mV @ 100mA, 1.5A
  • Status: Active

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