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Same model may have multiple batches, images only for reference.
PBSS4160T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4160T,215

Part No PBSS4160T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 1A SOT23
Datasheet
PBSS4160T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 250mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 200 @ 500mA, 5V
Maximum Power Dissipation 400mW
Frequency - Transition 220MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086471-PBSS4160T,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS4160T,215 CAD Model

Description

The PBSS4160T,215 is an NPN transistor with a maximum collector-emitter breakdown voltage of 60V.

  • Maximum Collector-Emitter Breakdown Voltage: 60V
  • Maximum Current Collector: 1A
  • Typical Gain (hFE): 200 @ 500mA, 5V
  • Frequency Transition: 220MHz
  • Maximum Power Dissipation: 400mW
  • Package: TO-236AB (SOT23)
  • Mounting Technology: SMD (SMT)
  • Collector Cut-off Current (max): 100nA
  • Vce (sat): 250mV @ 100mA, 1A
  • Category: Discrete semiconductor products
  • Product Status: Active
  • Supply and Demand Status: Sufficient

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