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PDTA114ET,215 Nexperia USA Inc. PDTA114ET,215 real image
Same model may have multiple batches, images only for reference.
PDTA114ET,215 Nexperia USA Inc. PDTA114ET,215 real image
PDTA114ET,215 Nexperia USA Inc. PDTA114ET,215 real image
Same model may have multiple batches, images only for reference.

PDTA114ET,215

Part No PDTA114ET,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW TO236AB
Datasheet
PDTA114ET,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1087157-PDTA114ET,215
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian PDTA114ET,215 CAD Model

Description

The Nexperia PDTA114ET,215 is a PNP pre-biased transistor with a maximum collector-emitter breakdown voltage (VCEO) of 50V and a maximum collector current of 100mA.

  • Maximum Collector-Emitter Breakdown Voltage (VCEO): 50V
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Saturation Voltage (Vce (sat)): 150mV @ 500μA, 10mA
  • Typical Gain (hFE): 30 @ 5mA and 5V
  • Mounting Type: Surface Mount Technology
  • Package: TO-236AB (SOT23)
  • Maximum Power Dissipation: 250mW
  • Operating Temperature Range: -55°C to 150°C
  • Applications: Power Management, Industrial, and Automotive

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