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PDTC114EU,135

Part No PDTC114EU,135
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 200MW SOT323 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number PDTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1727-8523-1,1727-8523-2,934044140135,PDTC114EU,135-ND,1727-8523-6
Standard Package 10,000
Win Source Part Number 1128142-PDTC114EU,135
Ultra Librarian 3D Model Ultra Librarian PDTC114EU,135 CAD Model

Description

The Nexperia USA Inc. PDTC114EU,135 is a pre-biased NPN transistor with a package/case of SC-70, SOT-323.

  • Mounting Type: surface mount
  • Power Dissipation: 200 mW
  • Voltage - Collector-Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 100 mA
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500μA, 10mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Alternative Part (Cross-Reference): PDTC114EU 135 and PDTC114EU135

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11,410+ €0.0238 €272.0552
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