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Same model may have multiple batches, images only for reference.
PDTC114TMB,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC114TMB,315

Part No PDTC114TMB,315
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW 3DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 200 @ 1mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Frequency - Transition 230MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package 3-DFN1006B (0.6x1)
Win Source Part Number 1087205-PDTC114TMB,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC114TMB,315 CAD Model

Description

The Nexperia USA Inc. PDTC114TMB,315 is a NPN - pre-biased transistor that has a maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Vce (sat): 150mV @ 500μA, 10mA
  • Collector Cut-Off Current (max): 1μA
  • Technology: SMD (SMT)
  • Package: 3-DFN1006B (0.6x1)
  • Typical Gain (hFE) (min): 200 @ 1mA, 5V
  • Maximum Power Dissipation: 250mW
  • Category: Discrete Semiconductor Product
  • Popularity: Medium

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