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Same model may have multiple batches, images only for reference.
PDTC123EU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC123EU,115

Part No PDTC123EU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC123EU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087212-PDTC123EU,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC123EU,115 CAD Model

Description

The PDTC123EU,115 is a pre-biased NPN transistor designed for use in discrete semiconductor products and manufactured by Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: PDTC123EU,115
  • Type: Pre-Biased NPN Transistor
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 30 @ 20mA, 5V
  • Maximum Power Dissipation: 200mW
  • Mounting Technology: SMD (SMT)
  • Package: SOT-323-3
  • Collector Cut-Off Current (Max): 1μA
  • Max Vce (sat): 150mV @ 500μA, 10mA
  • Supply and Demand Status: Balanced

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6,330+ $0.0158 $100.0140
9,805+ $0.0153 $150.0165
13,515+ $0.0148 $200.0220
17,485+ $0.0143 $250.0355
23,440+ $0.0128 $300.0320
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