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Same model may have multiple batches, images only for reference.
PEMB10,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMB10,115

Part No PEMB10,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SOT666
Datasheet
PEMB10,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087470-PEMB10,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMB10,115 CAD Model

Description

The PNP Pre-Biased Dual Transistor from Nexperia USA Inc. is a high-quality component that is ideal for use in a wide range of electronic applications.

  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: SOT-666
  • Typical Gain (hFE): 100 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Resistor-Base (R1): 2.2k Ohms
  • Resistor-Emitter Base (R2): 47k Ohms
  • Status: Active
  • Category: Discrete Semiconductor Products

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2,045+ $0.0566 $115.7470
3,125+ $0.0554 $173.1250
4,350+ $0.0531 $230.9850
5,560+ $0.0520 $289.1200
7,500+ $0.0462 $346.5000
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