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Same model may have multiple batches, images only for reference.
PEMD20,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMD20,115

Part No PEMD20,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 1NPN 1PNP SOT666
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Not For New Designs
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition -
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Base Product Number PEMD20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376953-PEMD20,115
Ultra Librarian 3D Model Ultra Librarian PEMD20,115 CAD Model

Description

The 1376953-PEMD20,115 is a bipolar transistor array from Nexperia USA Inc.

  • Transistor Configuration: One NPN and one PNP transistor, pre-biased
  • Mounting Type: Surface Mount
  • Package: SOT-666
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Base Resistor R1: 2.2kOhms
  • Base Resistor R2: 2.2kOhms
  • DC Current Gain: 30 @ 20mA and 5V
  • Saturation Voltage: 150mV @ 500µA and 10mA

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