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PHB47NQ10T,118

Part No PHB47NQ10T,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 47A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 166W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087788-PHB47NQ10T,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB47NQ10T,118 CAD Model

Description

The Nexperia USA Inc. PHB47NQ10T,118 MOSFET is an N-channel polarity MOSFET with a maximum power dissipation of 166W (Tc) and a drain-source breakdown voltage of 100V.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 166W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 47A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 3100pF @ 25V
  • Packaging: Reel
  • Package: D2PAK case/package
  • Operating Temperature: -55°C to 175°C (TJ)
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8208 $52.3872
21+ $4.7761 $100.2981
33+ $4.6268 $152.6844
45+ $4.4776 $201.4920
58+ $4.3283 $251.0414
78+ $3.8806 $302.6868
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Availability: 2,220 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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