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PMDXB600UNEZ

Name: PMDXB600UNEZ
Brand: Nexperia USA Inc.
SKU: 733445
Availability: InStock
Rating: 4.85 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	PMDXB600UNEZ
Manufacturer	Nexperia USA Inc.
Catalog	FETs - Arrays
Description	MOSFET 2N-CH 20V 0.6A 6DFN
Datasheet	PMDXB600UNEZ Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Nexperia USA Inc.
Packaging	Reel
Transistor Polarity	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	600mA
Rds On (Maximum) at Id, Vgs	620mOhm at 600mA, 4.5V
Gate Source Voltage(th) (Maximum) at Id	950mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs	0.7nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds	21.3pF at 10V
Maximum Power	265mW
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Manufacturer Package	6-XFDFN Exposed Pad
Supplier Device Package	DFN1010B-6
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	733445-PMDXB600UNEZ
Popularity	Low
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian PMDXB600UNEZ CAD Model

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Description

The Nexperia USA Inc. PMDXB600UNEZ is a dual N-channel transistor with a maximum power of 265mW and a drain-source breakdown voltage of 20V.

Maximum Power: 265mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 600mA
Rds On (Maximum) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Package: DFN1010B-6
Gate Source Voltage(th) (Maximum) @ Id: 950mV @ 250μA

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
355+	$0.1415	$50.2325
755+	$0.1326	$100.1130
1,175+	$0.1281	$150.5175
1,680+	$0.1192	$200.2560
2,180+	$0.1147	$250.0460
2,725+	$0.1102	$300.2950

Prices are subject to market and will be confirmed after the order is placed.

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 255,000 pieces

MOQ: 355 pcs

Order Increment : 1 pcs

Qty:

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