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PMPB20XPE,115 Nexperia USA Inc. PMPB20XPE,115 real image10954
Same model may have multiple batches, images only for reference.
PMPB20XPE,115 Nexperia USA Inc. PMPB20XPE,115 real image10954
PMPB20XPE,115 Nexperia USA Inc. PMPB20XPE,115 real image10954
Same model may have multiple batches, images only for reference.

PMPB20XPE,115

Part No PMPB20XPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.2A SOT1220
Datasheet
PMPB20XPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 294pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 23.5 mOhm @ 7.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN2020MD (2x2)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1089734-PMPB20XPE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMPB20XPE,115 CAD Model

Description

The Nexperia PMPB20XPE,115 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.2A @ 25°C
  • Maximum Gate Charge: 45nC @ 4.5V
  • Maximum Rds On: 23.5 mOhm @ 7.2A, 4.5V
  • Maximum Input Capacitance: 294pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Package: 6-DFN2020MD (2x2)
  • Dimension: 6-UDFN Exposed Pad
  • Category: Discrete Semiconductor Products
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: sufficient

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955+ $0.3038 $290.1290
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