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Same model may have multiple batches, images only for reference.
PMPB43XPE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMPB43XPE,115

Part No PMPB43XPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5A 6DFN
Datasheet
PMPB43XPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 23.4nC @ 4.5V
Max Input Capacitance 1550pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN2020MD (2x2)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1089739-PMPB43XPE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMPB43XPE,115 CAD Model

Description

The Nexperia USA Inc. PMPB43XPE,115 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V and a maximum continuous drain current of 5A @ 25°C.

  • Use: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 1.7W (Ta) and 12.5W (Tc)
  • Mounting Type: SMD (SMT) technology
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Rds On @ Id, Vgs: 48 mOhm @ 5A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 23.4nC @ 4.5V
  • Supply and Demand Status: Sufficient

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