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Same model may have multiple batches, images only for reference.
PSMN063-150D,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN063-150D,118

Part No PSMN063-150D,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 29A DPAK
Datasheet
PSMN063-150D,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 2390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1090359-PSMN063-150D,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN063-150D,118 CAD Model

Description

The Nexperia PSMN063-150D,118 is an N-channel MOSFET transistor designed for use in a wide range of applications, including power supplies, motor control, and lighting.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: PSMN063-150D,118
  • Type: N-channel MOSFET transistor
  • Maximum Power Dissipation: 150W
  • Drain-Source Breakdown Voltage: 150V
  • Package: DPAK
  • Operating Temperature Range: -55℃ to 175℃

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