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PSMN1R2-25YLDX

Part No PSMN1R2-25YLDX
Manufacturer Nexperia USA Inc.
Catalog OEM Souring
Description Trans MOSFET N-CH 25V 230A 5-Pin(4+Tab) LFPAK T/R
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1467027-PSMN1R2-25YLDX
Manufacturer Nexperia USA Inc.
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4327 pF @ 12 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 172W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Ultra Librarian 3D Model Ultra Librarian PSMN1R2-25YLDX CAD Model

Description

The PSMN1R2-25YLDX is a high-performance, N-channel MOSFET from Nexperia, optimized for power switching applications. With a drain-source voltage (Vds) of 25V and capable of delivering a continuous drain current (Id) of up to 230A, this component is designed for high efficiency in power conversion and management tasks. The MOSFET features a 5-Pin(4+Tab) LFPAK configuration, which is a type of surface-mount packaging known for its compact footprint and excellent thermal performance. The low on-resistance (Rds(on)) minimizes power losses, making the PSMN1R2-25YLDX suitable for a wide range of applications including DC-DC converters, motor drives, and power supply circuits. It comes in a tape and reel (T/R) packaging for ease of manufacturing automation. Furthermore, being from Nexperia, a leader in the field of discrete, logic, and MOSFET components, users can expect reliability and performance from this device.

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