The Nexperia USA Inc. PSMN2R9-30MLC,115 MOSFET is a high-performance N-Channel FET that can operate at temperatures ranging from -55°C to 175°C.

• Maximum Power Dissipation: 91W (Tc)
• Drain to Source Voltage (Vdss): 30V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Supplier Device Package: LFPAK33
• Manufacturer Package: SOT-1210, 8-LFPAK33
• Rds On (Maximum) @ Id, Vgs: 2.9mOhm @ 25A, 10V
• Gate Charge (Qg) (Maximum) @ Vgs: 36.1nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 2419pF @ 15V
• Continuous Drain Current (Id) @ 25°C: 70A (Tc)
• Vgs(th) (Maximum) @ Id: 2.15V @ 1mA
• Maximum Vgs: ±20V