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2N3583

Part No 2N3583
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 175V 0.01A TO66
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10 mA
Voltage - Collector Emitter Breakdown (Max) 175 V
Current - Collector Cutoff (Max) 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 10V
Power - Max 35 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Supplier Device Package TO-66 (TO-213AA)
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541056-2N3583
Ultra Librarian 3D Model Ultra Librarian 2N3583 CAD Model

Description

The 541056-2N3583 is a single NPN transistor, part of the Discrete Semiconductor Products category. It is designed for use in various electronic applications that require amplification or switching of electrical signals. With a maximum power rating of 35W, this transistor can handle moderate power loads. The voltage breakdown rating for this transistor is 175V, making it suitable for medium voltage applications. The maximum collector current rating is 10mA, allowing for efficient signal amplification. This transistor has a DC current gain of 40 @ 500mA, 10V, ensuring reliable signal amplification. The package type for this transistor is TO-213AA, TO-66-2 (TO-213AA), which allows for easy through-hole mounting. Operating within a temperature range of -65°C to 200°C, this transistor can withstand extreme temperature conditions. With its active status and reliable performance, the 541056-2N3583 is a popular choice for various electronic applications.

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