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NTE159

Part No NTE159
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 0.8A TO92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V
Power - Max 625 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 887763-NTE159
Ultra Librarian 3D Model Ultra Librarian NTE159 CAD Model

Description

The NTE159 is a PNP Bipolar Transistor designed for general purpose amplifier and switching applications.

  • Collector Current (Ic): 800 mA
  • Collector-Emitter Voltage (Vce) Breakdown: 80 V
  • Power Dissipation: 625 mW
  • DC Current Gain (hFE): 50 @ a collector current (Ic) of 10 mA and collector-emitter voltage (Vce) of 10 V
  • Vce Saturation: 500mV @ a base current (Ib) of 50mA and a collector current (Ic) of 500mA
  • Package: TO-92
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 206 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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