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2N7002BKT,115

Part No 2N7002BKT,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 0.29A Automotive 3-Pin SC-75 T/R / MOSFET N-CH 60V 290MA SOT416
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 290mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260mW (Ta)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75
Dimension SC-75, SOT-416
Win Source Part Number 096705-2N7002BKT,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name 2N7002BKT
Introduction Date June 15, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2N7002BKT,115 CAD Model

Description

Product Overview: 2N7002BKT,115 by NXP Semiconductors

The 2N7002BKT,115 is a high-performance, small-signal N-channel Field-Effect Transistor (FET) from the reputable NXP Semiconductors. This MOSFET is designed to deliver efficient power control and switching with a low on-state resistance, making it an ideal choice for a wide range of applications. The product is part of NXP's extensive portfolio of transistors, known for their reliability and performance.

Key Features

  • Low Threshold Voltage: With a low gate threshold voltage, this MOSFET can be easily driven by logic-level voltages, making it compatible with a variety of microcontrollers and digital circuits.
  • High-Speed Switching: The 2N7002BKT,115 is optimized for high-speed switching applications, ensuring minimal delay and high efficiency in circuits that require frequent on-off states.
  • Surface-Mount Package: The device comes in a small SOT-23 package, which is ideal for space-constrained applications and allows for efficient use of PCB real estate.
  • Low On-Resistance: It features a low on-state resistance, which minimizes power loss and heat generation when the transistor is in the 'on' state.
  • Energy Efficiency: The MOSFET's design is focused on providing energy-saving performance, which is crucial for battery-powered devices and power-sensitive applications.

Applications

The versatility of the 2N7002BKT,115 MOSFET allows it to be used in various applications, ranging from power management to signal processing. Some common applications include:

  • Load/Power Switching
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management in Portable Devices
  • Logic Level Conversion

Quality and Reliability

NXP Semiconductors is known for their commitment to quality, and the 2N7002BKT,115 is no exception. It is manufactured to meet high standards, ensuring consistent performance and reliability in a range of environmental conditions. Whether for industrial, commercial, or consumer applications, this MOSFET is designed to meet the rigorous demands of modern electronic devices.

With its combination of efficiency, speed, and compact form factor, the 2N7002BKT,115 from NXP Semiconductors is an excellent choice for designers looking to optimize their power control and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
905+ $0.0553 $50.0465
1,935+ $0.0518 $100.2330
3,000+ $0.0500 $150.0000
4,315+ $0.0464 $200.2160
5,610+ $0.0446 $250.2060
6,995+ $0.0429 $300.0855
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,740 pieces
MOQ: 905 pcs
Order Increment : 1 pcs
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