The BC856BT.115 is a high-performance PNP bipolar transistor from NXP Semiconductors, designed for general-purpose switching and amplification applications. This small-signal transistor is a part of the BC856 series, offering a perfect balance between efficiency and reliability, making it suitable for a wide range of electronic circuits.

Key Features

• Transistor Polarity: PNP - This indicates that the majority carriers are holes, making it suitable for positive signal amplification.
• Collector-Emitter Voltage (Vceo): 65V - This is the maximum voltage the transistor can withstand from the collector to the emitter when the base is open.
• Collector Current (Ic): 100mA - This is the maximum continuous current that can flow through the collector of the transistor.
• Power Dissipation (Pd): 250mW - The maximum amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
• DC Current Gain (hFE): The transistor has a high hFE, which means it can amplify a small base current into a larger collector current.
• Package: SOT-23 - A small surface-mount package that allows for compact PCB design and is suitable for automated assembly processes.

Applications

The BC856BT.115 is versatile and can be used in various applications such as:

• Signal Processing
• Audio Amplifiers
• Switching Circuits
• Power Management
• Linear Amplification and Switching

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and the BC856BT.115 is no exception. It is manufactured to meet the highest industry standards for performance and reliability, ensuring that it can withstand the rigors of everyday use in commercial and industrial environments.

Environmental Compliance

The BC856BT.115 is RoHS compliant, meaning it is manufactured with the restriction of certain hazardous substances in electrical and electronic equipment. This makes it an environmentally friendly choice for manufacturers looking to create sustainable products.