The BC856BW,135 is a high-quality PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors, a leader in the electronics industry. This small-signal transistor is designed for general-purpose switching and amplification applications, making it a versatile component suitable for a wide range of electronic circuits.

Key Features

• Type: PNP Bipolar Junction Transistor
• Package: SOT-323 (SC-70) surface-mount package, which is compact and suitable for high-density PCB designs.
• Collector-Emitter Voltage (Vceo): -65V, providing a good voltage handling capability for various applications.
• Collector Current (Ic): -100mA, allowing for sufficient current control in a circuit.
• Transition Frequency (ft): 100MHz, which indicates fast switching characteristics suitable for high-frequency applications.
• Power Dissipation (Pd): 250mW, ensuring the transistor can handle a moderate amount of power without overheating.
• DC Current Gain (hFE): High hFE, which ensures good amplification characteristics for the signal processing.

Applications

The BC856BW,135 transistor is ideal for various applications, including but not limited to:

• Signal Amplification
• Switching Circuits
• Audio Amplifiers
• Driver Stages in Hi-Fi Amplifiers and Television Circuits
• Linear Amplification and Switching

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BC856BW,135 is no exception. It is produced with high manufacturing standards, ensuring reliability and performance in your electronic projects. Whether you're developing a commercial product or working on a hobbyist project, you can rely on this transistor to deliver consistent results.

Environmental Compliance

The BC856BW,135 meets various environmental standards, making it a suitable choice for eco-conscious applications. NXP's dedication to sustainability means that you can incorporate this component into your designs with confidence in its environmental compliance.