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BF1201

Part No BF1201
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description N-channel dual-gate PoLo MOS-FETs
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Rohs State Need to verify
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153048-BF1201
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BF1201 CAD Model

Description

The NXP BF1201 is a high-performance, triple N-channel, silicon-based RF MOSFET designed to meet the rigorous demands of today's fast-paced and high-frequency applications. This compact, surface-mounted device is engineered to provide exceptional performance in a wide range of electronic products, including but not limited to RF amplifiers, mixers, oscillators, and switches.

Key Features:

  • High Frequency Operation: The BF1201 is optimized for high-frequency RF applications, ensuring minimal loss and distortion in signal processing.
  • Low Noise Figure: With an exceptionally low noise figure, it is ideal for sensitive RF circuits where signal integrity is paramount.
  • Enhanced Gain: It offers high forward transfer admittance, which leads to improved gain characteristics and overall device performance.
  • Triple-Gate Functionality: The triple-gate design allows for improved control and flexibility in circuit design, providing designers with the ability to fine-tune their applications for optimal performance.
  • Integrated ESD Protection: The BF1201 includes built-in electrostatic discharge protection, safeguarding the device from the common risks of handling and circuit integration.
  • Low Power Consumption: Designed for efficiency, it operates with low power consumption, making it suitable for battery-powered devices and energy-sensitive applications.

Applications:

The versatility of the NXP BF1201 allows it to be used in a variety of RF applications. These include, but are not limited to:

  • RF Identification (RFID) systems
  • Wireless communication devices
  • Global Positioning System (GPS) receivers
  • Industrial and medical applications requiring high-frequency signal processing

Technical Specifications:

  • Package: SOT363
  • Configuration: Triple N-Channel
  • Drain-Source Voltage (Vds): 6 V
  • Gate-Source Voltage (Vgs): +/- 8 V
  • Continuous Drain Current (Id): 30 mA
  • Power Dissipation (Pd): 300 mW
  • Operating Temperature Range: -55°C to +150°C

With its robust design and superior electrical characteristics, the NXP BF1201 is a reliable choice for engineers and designers looking to push the boundaries of RF technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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