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BFG410W,115

Part No BFG410W,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 4.5V 22GHZ SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 4.5V
Frequency - Transition 22GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.2dB @ 900MHz to 2GHz
Gain 21dB
Maximum Power Dissipation 54mW
Typical Gain (hFE) (Min) 50 @ 10mA, 2V
Maximum Current Collector 12mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CMPAK-4
Win Source Part Number 103761-BFG410W,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG410W,115 CAD Model

Description

The BFG410W,115 is a high-performance, wideband transistor designed and manufactured by NXP Semiconductors. This silicon NPN transistor is specifically engineered for a broad range of RF applications, making it an ideal choice for professionals in the telecommunications and electronics industries. Its wideband capability allows for use in various applications, including but not limited to, amplifiers, oscillators, and mixer circuits.

Key Features

  • Frequency Range: This transistor is optimized for high-frequency performance and is capable of operating in the GHz range, providing versatility for various RF applications.
  • Low Noise Figure: The BFG410W,115 boasts a low noise figure, making it suitable for sensitive RF signal amplification where maintaining signal integrity is crucial.
  • High Gain: Users can expect high gain levels, which translates to robust amplification capabilities for a variety of signal types.
  • High Transition Frequency (fT): With a high transition frequency, this transistor can handle fast-switching signals and is suitable for high-speed circuit designs.
  • Power Handling: The device is capable of handling a reasonable amount of power, making it suitable for medium-power applications.

Applications

The BFG410W,115 is commonly used in RF applications, including:

  • Wireless communication systems
  • RF front-end modules
  • Satellite TV receivers
  • Global Positioning Systems (GPS)
  • Industrial and medical applications

Product Specifications

The BFG410W,115 comes in an SOT-343 package, which is compact and suitable for surface-mounted technology (SMT). The product is provided in a reel, facilitating automated assembly processes. It is RoHS compliant and adheres to the strict standards set by NXP for reliability and performance.

Conclusion

Overall, the BFG410W,115 from NXP is a reliable and efficient solution for designers looking to integrate a wideband transistor into their RF circuit designs. Its combination of low noise, high gain, and wide frequency range makes it a versatile component that can enhance the performance of a wide array of electronic products.

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