The BUK6507-75C is a robust TrenchMOS silicon technology Power MOSFET manufactured by NXP Semiconductors, a leader in high-performance mixed-signal electronics. This power MOSFET is designed to deliver high efficiency and power density for a wide range of applications. It is well-suited for automotive applications and is compliant with the rigorous standards of the automotive industry.
Key Features
- Low On-State Resistance (RDS(on)): The device features a very low on-state resistance, which minimizes conduction losses and enhances overall efficiency, particularly important in applications where power conservation is critical.
- High-Speed Switching: With its fast switching capabilities, the BUK6507-75C is ideal for high-frequency applications, ensuring minimal switching losses and improved performance.
- High Current Capability: This MOSFET can handle high currents, making it suitable for demanding applications that require robust current handling.
- Robust Thermal Performance: The device is encapsulated in a D2PAK package, which offers excellent thermal conduction and heat dissipation characteristics, ensuring reliable operation under high-temperature conditions.
- Logic Level Compatible: It is compatible with 5V logic levels, which allows for easy integration with microcontrollers and other digital control circuits without the need for additional level-shifting components.
Applications
The BUK6507-75C is versatile and can be used in a variety of applications, including:
- Automotive systems
- DC/DC converters
- Motor control circuits
- Power management solutions
- Switched-mode power supplies
Product Specifications
| Parameter |
Value |
| Drain-source Voltage (VDS) |
75V |
| Continuous Drain Current (ID) |
75A |
| Power Dissipation (PD) |
110W |
| Operating Temperature Range |
-55°C to +175°C |
The BUK6507-75C is a testament to NXP's commitment to providing high-quality, durable, and efficient power solutions for a range of advanced electronic applications.