The BUK7528-100A is a state-of-the-art, high-performance N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This device is particularly suitable for applications requiring high efficiency and power density. With its low on-state resistance and high switching speed, the BUK7528-100A is well-suited for a wide range of power conversion and management tasks in modern electronic systems.
Key Features
- Low On-State Resistance (RDS(on)): This transistor offers an exceptionally low on-state resistance, which translates into reduced conduction losses and improved overall efficiency in applications.
- High-Speed Switching: The device is capable of high-speed switching, making it ideal for high-frequency power supplies and converters.
- Standard Level Gate Drive: The BUK7528-100A operates with standard level gate drive voltages, simplifying the design of drive circuits and compatibility with existing systems.
- Robust Thermal Performance: With an excellent thermal design, this product ensures reliable operation even under high power and temperature conditions.
- Improved Power Density: Its compact package allows for a reduction in PCB space, enabling higher power density in system designs.
Applications
The versatility of the BUK7528-100A makes it an excellent choice for a variety of applications, including:
- DC/DC converters
- Motor drives
- Power management systems
- Switching regulators
- Automotive applications and load switches
Product Specifications
| Parameter |
Value |
| Drain-source voltage (VDS) |
100V |
| Continuous drain current (ID) |
75A |
| Power dissipation (PD) |
110W |
| Operating temperature range |
-55°C to +175°C |
Overall, the BUK7528-100A from NXP is a robust and reliable choice for designers looking to optimize their power management systems for both performance and size. Its combination of low on-state resistance, high switching speed, and thermal efficiency makes it a go-to component for a multitude of power applications.