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BUK762R6-40E/GFJ

Part No BUK762R6-40E/GFJ
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS N-CH D2PAK / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NXP
Series *
Package Tape & Reel
Product Status Obsolete
Base Product Number BUK76
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 440008-BUK762R6-40E/GFJ
Ultra Librarian 3D Model Ultra Librarian BUK762R6-40E/GFJ CAD Model

Description

Introducing the BUK762R6-40E/GFJ from NXP Semiconductors

The BUK762R6-40E/GFJ is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, a leader in providing innovative semiconductor solutions. This product is designed to meet the stringent requirements of automotive and industrial applications, offering a robust and efficient solution for power management and switching.

Key Features

  • Low On-State Resistance: The BUK762R6-40E/GFJ boasts an exceptionally low on-state resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses. This feature makes it ideal for high-current applications.
  • High Continuous Current: With the capability to handle a high continuous current, this MOSFET is well-suited for demanding environments where superior current handling is essential.
  • High-Speed Switching: Engineered for high-speed switching performance, the BUK762R6-40E/GFJ ensures swift and responsive operation, which is critical for power regulation and conversion applications.
  • Standard Level Gate Drive: The device is compatible with standard level gate drive voltages, allowing for flexibility and compatibility with a wide range of drive circuits and controllers.
  • Automotive Qualified: Meeting the rigorous AEC-Q101 standards for automotive quality, this MOSFET is reliable and durable, capable of withstanding the harsh conditions typically found in automotive environments.

Applications

The BUK762R6-40E/GFJ is versatile and can be used in a variety of applications, including:

  • Automotive systems such as Engine Management and Power Steering
  • DC/DC converters
  • Motor control circuits
  • Load switches
  • Power distribution systems

Product Specifications

The device operates with a drain-source voltage (V<sub>DSS) of 40V, which provides a good balance between breakdown voltage and low voltage performance. The silicon technology used in the TrenchMOS™ transistor ensures that the device not only operates at high efficiency but also maintains stability over a wide range of temperatures and conditions.

With the BUK762R6-40E/GFJ, NXP Semiconductors continues its tradition of delivering high-quality, reliable components that drive innovation in the automotive and industrial sectors. By choosing this MOSFET, designers and engineers can expect enhanced performance, energy efficiency, and long-term reliability for their demanding applications.

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