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BUK7C1R8-60EJ

Part No BUK7C1R8-60EJ
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200A D2PAK-7 / N-Channel 60 V Surface Mount D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number BUK7C1
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346174-BUK7C1R8-60EJ
Ultra Librarian 3D Model Ultra Librarian BUK7C1R8-60EJ CAD Model

Description

Introducing the BUK7C1R8-60EJ Power MOSFET by NXP Semiconductors

The BUK7C1R8-60EJ is a high-performance Power MOSFET designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This state-of-the-art component is part of NXP's extensive portfolio of power management solutions, specifically engineered to meet the demands of modern electronic applications requiring efficient power conversion and control.

Key Features

  • Low On-State Resistance: The BUK7C1R8-60EJ boasts an extremely low on-state resistance (R<sub>DS(on)) of 1.8 mΩ at a gate drive of 10V. This feature ensures reduced conduction losses and improved overall efficiency, making it ideal for high-efficiency power supplies and DC-DC converters.
  • High Continuous Current: With a continuous drain current (I<sub>D) of up to 100A, this MOSFET can handle high current loads, making it suitable for demanding applications such as motor control, server farms, and automotive systems.
  • 60V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 60V, which provides a good safety margin for most 48V power systems and other applications operating in this voltage range.
  • Enhanced Power Density: Housed in an LFPAK56 (Power-SO8) package, the BUK7C1R8-60EJ offers a compact footprint without compromising on power handling, making it an excellent choice for space-constrained applications.

Applications

The versatility of the BUK7C1R8-60EJ allows it to be used in a wide array of applications, including:

  • High-efficiency DC-DC converters
  • Switch-mode power supplies (SMPS)
  • Motor drives and control systems
  • Automotive applications, including Electric Power Steering (EPS) and LED lighting
  • Battery management systems
  • Power management for telecom and computing infrastructures

Reliability and Performance

Constructed with NXP's proven TrenchMOS silicon technology, the BUK7C1R8-60EJ offers superior switching performance and robustness. Its enhanced thermal characteristics ensure reliability even under high switching frequencies or heavy load conditions. Moreover, with its integrated ESD protection, the MOSFET is safeguarded against electrostatic discharges, further enhancing its durability and lifespan in various environments.

Whether you're designing power systems for industrial, automotive, or consumer applications, the BUK7C1R8-60EJ Power MOSFET from NXP Semiconductors is a reliable and efficient solution that delivers exceptional performance where it counts.

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