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Same model may have multiple batches, images only for reference.
GA100JT12-227 Real Image
Same model may have multiple batches, images only for reference.

GA100JT12-227

Part No GA100JT12-227
Manufacturer GeneSiC Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS SJT 1200V 160A SOT227
Datasheet
GA100JT12-227 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer GeneSiC Semiconductor
Packaging Tube
Technology SiC (Silicon Carbide Junction Transistor)
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 160A
Input Capacitance (Ciss) (Maximum) @ Vds 14400pF @ 800V
Power Dissipation (Maximum) 535W (Tc)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 100A
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227
Package SOT-227-4, miniBLOC
Win Source Part Number 774970-GA100JT12-227
Popularity Medium
Supply and Demand Status Limited
Quantity per package 10
Ultra Librarian 3D Model Ultra Librarian GA100JT12-227 CAD Model

Description

The GA100JT12-227 is a SiC (Silicon Carbide Junction Transistor) from an unknown manufacturer.

  • Drain-Source Voltage: 1200V
  • Continuous Drain Current (Id): 160A
  • Input Capacitance (Ciss): 14400pF @ 800V
  • Rds On (Max): 10 mOhm @ 100A
  • Package: SOT-227-4, miniBLOC
  • Mounting: Chassis
  • Maximum Power Dissipation: 535W (Tc)
  • Operating Temperature Range: -55°C ~ 175°C (TJ)

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