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LTA804N

Part No LTA804N
Manufacturer NXP / Nexperia
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1013228-LTA804N
Categories OEM Parts(J-L)
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian LTA804N CAD Model

Description

The LTA804N is a state-of-the-art power MOSFET produced by NXP Semiconductors, a leader in the industry known for its innovative and reliable products. This component is designed to meet the high demands of modern electronic circuits, offering exceptional performance in a wide range of applications.

Key Features

  • High Efficiency: The LTA804N features low on-state resistance (RDS(on)), which reduces conduction losses and improves overall efficiency, making it suitable for power-intensive applications.
  • Advanced Technology: Utilizing NXP's latest trench MOSFET technology, the LTA804N offers superior switching performance, which is vital in high-speed switching applications.
  • Thermal Performance: With an excellent thermal design, the LTA804N ensures stable operation even under high temperature environments, contributing to the longevity of the device.
  • Robustness: The device is engineered to withstand high energy pulses in the avalanche and commutation modes, which is essential for applications that experience unpredictable power surges.

Applications

The versatility of the LTA804N makes it an ideal choice for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators
  • Power supplies

Product Specifications

The LTA804N boasts a comprehensive set of specifications that ensure its adaptability and performance in challenging conditions:

  • Drain-source voltage (VDS): The maximum voltage the MOSFET can handle across its drain-source terminals.
  • Continuous drain current (ID): The maximum current the device can conduct continuously at a specified temperature.
  • Gate-source voltage (VGS): The maximum voltage that can be applied to the gate without causing damage.
  • Power dissipation (PD): The amount of power the MOSFET can dissipate through heat.

For engineers and designers looking for a robust and efficient power MOSFET solution, the LTA804N from NXP Semiconductors is a premier choice that combines performance, durability, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 432 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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