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MRF6S24140HR5

Part No MRF6S24140HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.39GHZ NI-880
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 2.39GHz
Gain 15.2dB
Voltage - Test 28 V
Current - Test 1.3 A
Power - Output 28W
Voltage - Rated 68 V
Mounting Type Chassis Mount
Package / Case SOT-957A
Supplier Device Package NI-880H-2L
Base Product Number MRF6
Standard Package 50 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 928078-MRF6S24140HR5
Ultra Librarian 3D Model Ultra Librarian MRF6S24140HR5 CAD Model

Description

Product Overview: MRF6S24140HR5 by NXP

The MRF6S24140HR5 is a high-performance RF power transistor designed by NXP Semiconductors, a leader in the production of secure connectivity solutions for embedded applications. This product is part of NXP's RF power LDMOS transistor family and is specifically engineered to deliver outstanding performance in high-frequency applications.

Key Features

  • Frequency Range: The MRF6S24140HR5 operates effectively over a broad frequency range, making it suitable for various applications, including broadband communications and RF energy.
  • High Output Power: With a high output power capability, this transistor can deliver up to 140W of continuous wave power, ensuring reliable and strong signal transmission.
  • High Gain: Offering a high gain of 18 dB, the MRF6S24140HR5 ensures amplified signal strength without the need for additional amplification stages, enhancing overall system efficiency.
  • Efficiency: The device boasts an excellent efficiency rating, which minimizes power loss and heat generation, contributing to the longevity and reliability of the system.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection safeguards the transistor against sudden voltage spikes, thus enhancing its durability.

Applications

The versatility of the MRF6S24140HR5 makes it an ideal choice for a range of applications. It is commonly used in:

  • Base station transceivers for wireless communication
  • Industrial, scientific, and medical (ISM) band applications
  • Broadband RF power amplifiers
  • RF generators for heating and plasma lighting

Quality and Reliability

NXP's commitment to quality is evident in the MRF6S24140HR5, which is manufactured to meet high industry standards. The device is rigorously tested to ensure performance consistency and reliability, making it a trusted component for mission-critical systems.

Environmental Compliance

The MRF6S24140HR5 is designed with environmental considerations in mind. It complies with RoHS directives, which restrict the use of certain hazardous materials in electronic equipment, reflecting NXP's dedication to environmental sustainability.

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