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MRF6V14300HR5

Part No MRF6V14300HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 50V NI780H  /  RF Mosfet LDMOS 50 V 150 mA 1.4GHz 18dB 330W NI-780H-2L
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Transistor Type LDMOS
Frequency 1.4GHz
Gain 18dB
Voltage - Test 50 V
Current - Test 150 mA
Power - Output 330W
Voltage - Rated 100 V
Package / Case SOT-957A
Supplier Device Package NI-780H-2L
Base Product Number MRF6V14300
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935313404178
Standard Package 50
Win Source Part Number 1221493-MRF6V14300HR5
Ultra Librarian 3D Model Ultra Librarian MRF6V14300HR5 CAD Model

Description

Product Overview: MRF6V14300HR5 - NXP

The MRF6V14300HR5 is a high-performance, RF power transistor from NXP Semiconductors, designed for use in a wide range of applications, including broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF energy and large-scale commercial and military radio communications.

Key Features:

  • Frequency Range: The device operates at a frequency range of 1.4 to 1.5 GHz, making it suitable for various high-frequency applications.
  • High Output Power: It delivers a high output power of 330 Watts, ensuring strong signal transmission for reliable communication and effective industrial processes.
  • High Gain: With a high gain of 23 dB, this transistor amplifies RF signals efficiently, resulting in improved overall system performance.
  • Efficiency: The MRF6V14300HR5 boasts an excellent efficiency of up to 70%, minimizing energy loss and ensuring cost-effective operation.
  • Thermal Performance: Its superior thermal performance is facilitated by an advanced package design that enhances heat dissipation.
  • Ruggedness: It is engineered for enhanced ruggedness, capable of withstanding harsh operating conditions, which makes it ideal for mission-critical applications.
  • Integrated ESD Protection: The device includes integrated electrostatic discharge (ESD) protection features to safeguard against unexpected voltage spikes.

Applications:

  • Broadcast transmitters for radio and television
  • Industrial heating and welding equipment
  • Medical applications such as MRI and RF ablation
  • Plasma generators for semiconductor manufacturing
  • Communications infrastructure for military and commercial use

The MRF6V14300HR5 is built on NXP's advanced laterally diffused metal oxide semiconductor (LDMOS) technology, which is renowned for its high linearity, ruggedness, and reliability. This technology, combined with the product's features, ensures that it meets the stringent demands of modern RF power applications. Whether for high-power broadcasting or for precision industrial processes, the MRF6V14300HR5 from NXP is a compelling choice for designers looking for a robust and efficient RF power solution.

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