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MRF6VP2600HR6

Part No MRF6VP2600HR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 110V 225MHZ NI1230  /  RF Mosfet LDMOS (Dual) 50 V 2.6 A 225MHz 25dB 125W NI-1230
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 225MHz
Gain 25dB
Voltage - Test 50 V
Current - Test 2.6 A
Power - Output 125W
Voltage - Rated 110 V
Package / Case NI-1230
Supplier Device Package NI-1230
Base Product Number MRF6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935319433128,MRF6VP2600HR6-ND,MRF6VP2600HR6CT,MRF6VP2600HR6DKR,MRF6VP2600HR6TR
Standard Package 150
Win Source Part Number 1033177-MRF6VP2600HR6
Ultra Librarian 3D Model Ultra Librarian MRF6VP2600HR6 CAD Model

Description

Product Overview: MRF6VP2600HR6 - NXP

The MRF6VP2600HR6 is a high-power RF transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance RF solutions. This device is part of NXP's extensive RF power transistor portfolio and is specifically engineered for applications requiring high efficiency and wide bandwidth capabilities.

Key Features:

  • Frequency Range: The MRF6VP2600HR6 operates at a frequency range of 1.8-600 MHz, making it versatile for a variety of RF applications including broadcast, industrial, and military.
  • Output Power: With an impressive output power of 600W, this LDMOS transistor is capable of delivering high power levels, essential for applications such as high-power amplifiers.
  • High Gain: The device offers high gain performance, typically 23 dB, ensuring efficient signal amplification in the intended frequency range.
  • High Efficiency: The MRF6VP2600HR6 is designed for high efficiency, with a typical performance of 75% peak efficiency, reducing overall system power consumption and heat generation.
  • Ruggedness: This transistor is rugged and can withstand a VSWR of 10:1 through all phases of the pulse, providing reliable performance under mismatched load conditions.
  • Integrated ESD Protection: The device includes integrated ESD protection, enhancing its robustness and longevity in harsh environments.

Applications:

The versatility of the MRF6VP2600HR6 makes it suitable for a wide range of applications. It is commonly used in RF power amplifiers for FM broadcast, VHF TV broadcast, industrial heating and plasma generation, as well as for scientific and medical applications. Its ruggedness also makes it a reliable choice for military communications and radar systems.

Package and Quality:

The MRF6VP2600HR6 is encapsulated in a high-performance ceramic package that provides excellent thermal stability and is designed for high reliability. NXP's commitment to quality ensures that each device meets stringent industry standards for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $259.7015 $259.7015
2+ $232.8359 $465.6718
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Availability: 100 pieces
Order Increment : 1 pcs
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