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MRF8S21200HSR5

Part No MRF8S21200HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.14GHZ NI-1230HS / RF Mosfet 28 V 1.4 A 2.14GHz 18.1dB 48W NI-1230S
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Discontinued
Technology LDMOS
Configuration Dual
Frequency 2.14GHz
Gain 18.1dB
Voltage - Test 28 V
Current - Test 1.4 A
Power - Output 48W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case NI-1230S
Supplier Device Package NI-1230S
Base Product Number MRF8
Standard Package 50 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8541.29.0075
Win Source Part Number 928096-MRF8S21200HSR5
Ultra Librarian 3D Model Ultra Librarian MRF8S21200HSR5 CAD Model

Description

Product Overview: MRF8S21200HSR5

The MRF8S21200HSR5 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This state-of-the-art transistor is specifically engineered to meet the demanding requirements of high-power RF applications, including broadcast transmitters, industrial, scientific, medical (ISM) applications, and RF energy solutions.

Key Features

  • Frequency Range: The MRF8S21200HSR5 operates at a frequency range of 1800-2200 MHz, making it suitable for various wireless communication systems, including LTE and WCDMA base stations.
  • High Output Power: With an impressive output power of 53 dBm (200 W CW), this LDMOS transistor can deliver the power needed for applications that require a strong RF signal.
  • High Gain: It offers high gain performance, typically 17 dB gain, which ensures efficient signal amplification and contributes to the overall system performance.
  • High Efficiency: The device boasts high efficiency, with a typical efficiency of 32%, reducing the power consumption and heat dissipation during operation, which is crucial for system reliability and longevity.
  • Integrated ESD Protection: The MRF8S21200HSR5 comes with integrated ESD protection, providing robustness and enhancing the durability of the device against electrostatic discharges.
  • Thermally Enhanced Packaging: Housed in a RoHS compliant, over-molded plastic package, the transistor is designed to improve thermal performance and simplify the system cooling requirements.

Applications

The versatility of the MRF8S21200HSR5 makes it an ideal choice for a variety of high-power RF applications. It is commonly used in:

  • Base station applications for LTE, WCDMA, and multicarrier GSM/EDGE
  • ISM applications such as industrial heating, welding, and plasma generation
  • RF energy applications including cooking, lighting, and medical treatments

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the MRF8S21200HSR5 is no exception. It is manufactured to meet the highest industry standards, ensuring consistent performance and longevity in the most challenging environments.

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