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MRF9085LSR5

Part No MRF9085LSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 880MHZ NI-780S / Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 17.9dB
Voltage - Test 26V
Current - Test 700mA
Power - Output 90W
Voltage Rating DC 65V
Package NI-780S
Manufacturer Package NI-780S
Win Source Part Number 789471-MRF9085LSR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF9085LS
Introduction Date March 30, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF9085LSR5 CAD Model

Description

Product Overview: MRF9085LSR5 by NXP

The MRF9085LSR5 is a high-performance RF power transistor from the renowned semiconductor manufacturer, NXP Semiconductors. This product is part of NXP's extensive RF portfolio, designed to deliver exceptional performance for a wide range of applications, including but not limited to, cellular base station transmitters, broadcast transmitters, and industrial uses.

Key Features

  • Frequency Range: The MRF9085LSR5 operates within a frequency range that is optimized for cellular applications, ensuring compatibility with various communication standards.
  • Output Power: With a high output power capability, this transistor is capable of delivering the power levels required for effective RF transmission, contributing to the overall efficiency and reach of the communication system.
  • Efficiency: The device is engineered to provide high efficiency, which is crucial for minimizing heat generation and power consumption, thus improving the overall system reliability and cost-effectiveness.
  • Thermal Performance: The MRF9085LSR5 boasts excellent thermal performance characteristics, thanks to its robust design and superior materials, which help maintain stable operation even under high temperature conditions.
  • Ruggedness: Durability and ruggedness are key attributes of this RF power transistor, making it suitable for demanding environments where reliability is paramount.
  • Integrated ESD Protection: Electrostatic discharge (ESD) protection is built-in, safeguarding the device from unexpected electrical surges that can cause damage or impair functionality.

Applications

The MRF9085LSR5 is specifically designed for RF applications that require high power and efficiency. Its typical applications include:

  • Cellular base station transmitters for various communication standards
  • Broadcast transmitters for television and radio
  • Industrial and commercial RF power applications

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The MRF9085LSR5 is manufactured in state-of-the-art facilities, ensuring that each component meets NXP's rigorous specifications for performance and durability, making it a trusted choice for critical communication infrastructure.

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