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PDTA114YS,126

Part No PDTA114YS,126
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 500MW TO92-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 5mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 500mW
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 1035534-PDTA114YS,126
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTA114YS,126 CAD Model

Description

The NXP PDTA114YS,126 is a PNP Resistor-Equipped Transistor (RET) that combines the functionality of a single PNP transistor with built-in bias resistors. This innovative component simplifies circuit design by reducing component count, which can lead to increased reliability and cost-effectiveness in a wide range of applications.

Key Features

  • Integrated Bias Resistors: Comes with a 10 kΩ base resistor and a 10 kΩ resistor between the base and emitter, reducing the need for external components.
  • Surface-Mount Package: Enclosed in a small SOT-416 (SC-75) surface-mount package, it is ideal for high-density PCB designs.
  • High Current Gain: Features a high current gain (hFE), ensuring efficient operation in amplification applications.
  • Low Voltage Operation: Capable of operating at low voltages, making it suitable for low-power circuits.
  • RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances Directive, making it suitable for use in environmentally sensitive applications.

Applications

The PDTA114YS,126 is versatile and can be used in various applications, including:

  • Automotive modules
  • Power management systems
  • Signal processing
  • Control systems
  • DC-DC converters
  • LED drivers

Technical Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 50V Collector Current (Ic) 100mA Power Dissipation (Pd) 250mW Operating Temperature Range -55°C to +150°C

The NXP PDTA114YS,126 provides a compact, efficient, and reliable solution for designers looking to streamline their circuit designs without compromising on performance. With its integrated resistors and high current gain, this RET is an excellent choice for a multitude of electronic applications.

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