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Same model may have multiple batches, images only for reference.
SIHP25N40D-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP25N40D-GE3

Part No SIHP25N40D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 25A TO220AB  /  N-Channel 400 V 25A (Tc) 278W (Tc) Through Hole TO-220AB
Datasheet
SIHP25N40D-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1707 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP25
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHP25N40DGE3
Standard Package 1,000
Win Source Part Number 1225056-SIHP25N40D-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP25N40D-GE3 CAD Model

Description

The SIHP25N40D-GE3 is an N-channel MOSFET transistor designed for use in discrete semiconductor products such as FETs.

  • Maximum Drain-to-Source Voltage: 400 V
  • Continuous Drain Current: 25 A @ 25°C
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay Siliconix

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19+ $5.3208 $101.0952
30+ $5.1546 $154.6380
41+ $4.9883 $204.5203
52+ $4.8220 $250.7440
70+ $4.3232 $302.6240
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Availability: 13,000 pieces
MOQ: 8 pcs
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