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PDTC123EE,115

Part No PDTC123EE,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 097538-PDTC123EE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC123EE,115 CAD Model

Description

The PDTC123EE,115 is a high-quality NPN resistor-equipped transistor, also known as a digital transistor, designed and manufactured by NXP Semiconductors. This innovative component is designed to simplify circuit design by integrating the bias resistor network into the transistor package, thereby reducing component count and saving space on printed circuit boards (PCBs).

Key Features

  • Integrated Bias Resistor: The device includes a built-in bias resistor network, which helps to stabilize the transistor's operation and reduce design complexity.
  • Surface-Mount Package: It comes in a small SOT-416 (SC-75) surface-mount package, which is ideal for applications where space is at a premium.
  • High Current Gain: The PDTC123EE,115 boasts a high current gain, ensuring efficient signal amplification in various applications.
  • Low Voltage Operation: This transistor operates at low voltages, making it suitable for portable and battery-operated devices.

Applications

The PDTC123EE,115 is versatile and can be used in a wide range of applications, including but not limited to:

  • Switching and amplification in consumer electronics
  • Driver circuits in display modules
  • Power management in portable devices
  • Control circuits in embedded systems

Technical Specifications

Parameter Value Configuration Single Collector- Emitter Voltage (Vceo) 50V Collector Current (Ic) 100mA Power Dissipation (Pd) 200mW DC Current Gain (hFE), Min 100

With its integrated design and efficient performance, the PDTC123EE,115 from NXP is an excellent choice for designers looking to streamline their circuit designs while maintaining functionality and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1173 $50.4390
1,040+ $0.0963 $100.1520
1,610+ $0.0933 $150.2130
2,215+ $0.0903 $200.0145
2,865+ $0.0873 $250.1145
3,840+ $0.0782 $300.2880
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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