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PDTC143ZE,115

Part No PDTC143ZE,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 096194-PDTC143ZE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC143ZE,115 CAD Model

Description

The PDTC143ZE,115 is a cutting-edge digital transistor designed and manufactured by NXP Semiconductors, a leader in the electronics industry. This product is part of NXP's extensive range of bipolar junction transistors (BJTs) that are known for their reliability and performance in various applications. The PDTC143ZE,115 is specifically engineered to deliver efficient switching and amplification capabilities, making it an ideal choice for designers looking to optimize their electronic circuits.

Key Features

  • Transistor Type: The PDTC143ZE,115 is an NPN resistor-equipped transistor (RET), which integrates a bias resistor network into a single package. This feature simplifies circuit design and reduces component count.
  • Package: Encased in a small SOT-416 (SC-75) surface-mount package, this transistor is optimized for high-density PCB layouts, offering a compact solution without compromising on performance.
  • Operating Conditions: It is designed to operate within a wide range of temperatures, typically from -55°C to +150°C, ensuring stability and functionality under varying environmental conditions.
  • Applications: Given its versatility, the PDTC143ZE,115 is suitable for a broad spectrum of applications, including but not limited to switching operations, inverter circuits, interface circuits, and driver circuits.

Electrical Characteristics

The PDTC143ZE,115 boasts impressive electrical characteristics that contribute to its high performance in electronic circuits. It features a continuous collector current of up to 100 mA, which allows it to handle moderate power switching applications with ease. The integrated resistors have values that are precisely engineered to provide optimal biasing, which is essential for the transistor's switching operations. Additionally, the device exhibits low saturation voltages and high gain bandwidth product, which are critical parameters for fast switching and signal amplification.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PDTC143ZE,115 is no exception, as it undergoes rigorous testing and quality control measures to ensure it performs to specifications. Customers can trust that this transistor will provide consistent performance and durability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.4819 $68.8914
13+ $9.4213 $122.4769
19+ $9.1268 $173.4092
27+ $8.8323 $238.4721
34+ $8.5378 $290.2852
46+ $7.6542 $352.0932
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Availability: 12,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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