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PMV30UN,215

Part No PMV30UN,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.7A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 700mV @ 1mA
Max Gate Charge 7.4nC @ 4.5V
Max Input Capacitance 460pF @ 20V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.9W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 004417-PMV30UN,215
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMV30UN,215 CAD Model

Description

Product Overview: PMV30UN,215

The PMV30UN,215 is a high-performance, N-channel Trench MOSFET produced by NXP Semiconductors, a leader in the industry known for its commitment to innovation and quality. Designed with state-of-the-art technology, this MOSFET is optimized for low threshold voltage and high-speed switching applications. The PMV30UN,215 is ideal for a wide range of applications, including but not limited to power management, load switching, and high-efficiency DC-DC converters.

Key Features

  • Low Threshold Voltage: It features a low threshold voltage that ensures it can be driven by low-voltage logic signals, making it suitable for battery-operated devices and low-voltage microcontrollers.
  • High-Speed Switching: The device boasts high-speed switching capabilities, which is crucial for applications requiring fast response times.
  • Low On-Resistance: The MOSFET has a low on-resistance (Rds(on)), which minimizes conduction losses and improves overall efficiency.
  • Enhanced Power Efficiency: Its design focuses on reducing power consumption, thereby enhancing power efficiency in electronic circuits.
  • Small Footprint: The compact SOT-23 package allows for a small PCB footprint, making it an excellent choice for space-constrained applications.

Applications

The versatility of the PMV30UN,215 allows it to be used in various electronic systems. Key applications include:

  • Power management modules
  • Load switches
  • Battery-powered devices
  • DC-DC converters
  • Motor control circuits

Product Specifications

The PMV30UN,215 operates in a continuous drain current of 1.8 A and has a maximum drain-source voltage (Vds) of 30 V. It features a maximum Rds(on) of 100 mΩ at a 4.5 V gate drive. The device also has a low gate charge, which facilitates faster switching.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PMV30UN,215 is no exception, as it is manufactured with rigorous quality control processes and is designed to meet stringent industry certifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0944 $50.0320
1,135+ $0.0884 $100.3340
1,760+ $0.0854 $150.3040
2,520+ $0.0795 $200.3400
3,270+ $0.0765 $250.1550
4,085+ $0.0735 $300.2475
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,170 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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