PSMN011-30YLC,115

Part No PSMN011-30YLC,115
Manufacturer NXP
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 37A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 10.3nC @ 10V
Max Input Capacitance 641pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29W (Tc)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 138508-PSMN011-30YLC,115
Popularity Medium
Supply and Demand Status Limited

Description

Product Overview: PSMN011-30YLC,115 - NXP Semiconductors

The PSMN011-30YLC,115 is a high-performance N-channel MOSFET produced by NXP Semiconductors, a renowned leader in the field of advanced semiconductor solutions. This MOSFET is designed to deliver exceptional efficiency and power density, which is essential for a wide range of power conversion and management applications.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance of 30 mΩ at a gate drive of 10V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: With a continuous drain current of 100A, this MOSFET can handle high current applications with ease, making it suitable for demanding environments.
  • High-Speed Switching: The PSMN011-30YLC,115 has been optimized for fast switching performance, which is critical for reducing switching losses in applications such as DC-DC converters, motor drives, and power supplies.
  • Low Gate Charge: A low gate charge ensures that the device can be driven at high frequencies without incurring significant driver losses, thereby improving the performance of high-speed circuits.
  • Robust Body Diode: The MOSFET features a robust and fast body diode, which provides reliable performance during reverse recovery and is suitable for hard commutation conditions.

Applications

The versatility of the PSMN011-30YLC,115 allows it to be used in a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor control circuits
  • Synchronous rectification
  • Power management systems

Package and Quality

The PSMN011-30YLC,115 is housed in a compact LFPAK56 (Power-SO8) package, which is designed to offer excellent thermal performance and a small footprint on the PCB. NXP's commitment to quality ensures that this MOSFET meets stringent industry standards for reliability and performance.

Environmental Compliance

NXP Semiconductors is dedicated to environmentally responsible manufacturing. The PSMN011-30YLC,115 is compliant with RoHS regulations, ensuring that it is free from hazardous substances and suitable for use in green electronics.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
105+ $0.4880 $51.2400
250+ $0.4000 $100.0000
390+ $0.3880 $151.3200
535+ $0.3750 $200.6250
690+ $0.3630 $250.4700
925+ $0.3250 $300.6250
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 50,500 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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