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PUMD9,165

Part No PUMD9,165
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 5mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 096207-PUMD9,165
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUMD9,165 CAD Model

Description

The NXP PUMD9,165 is a cutting-edge semiconductor product designed for a variety of electronic applications. This versatile component is manufactured by NXP Semiconductors, a trusted leader in the industry known for their high-quality and reliable products. The PUMD9,165 is part of NXP's extensive portfolio of transistors, which are integral to modern electronic circuits.

Key Features

  • Device Type: The PUMD9,165 is a bipolar junction transistor (BJT), which is a type of transistor that uses both electron and hole charge carriers. This allows for low power consumption and high efficiency.
  • Configuration: It is a dual NPN/PNP transistor, meaning it contains two transistors within a single package – one NPN and one PNP. This dual configuration makes it highly versatile for various circuit designs.
  • Package: The component comes in a small SOT-363 package, which is ideal for space-constrained applications. Its compact size enables it to be used in densely packed PCBs without sacrificing performance.
  • Applications: The PUMD9,165 is suitable for a wide range of applications, including switching and amplification in consumer electronics, automotive, and industrial control systems. It is often used in signal processing, power management, and other circuits requiring discrete components.

Electrical Characteristics

The electrical properties of the PUMD9,165 are tailored to provide reliable performance in a variety of conditions. It offers a collector-emitter voltage (Vceo) that supports the needs of most low to medium power applications. Additionally, the transistor boasts a high collector current and low saturation voltage, which contribute to its efficiency and thermal stability.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PUMD9,165 is no exception, undergoing rigorous testing and quality assurance measures to ensure its durability and longevity in the field. Customers can trust that this component will perform consistently over a wide range of operating conditions.

Environmental Compliance

The PUMD9,165 is designed with environmental considerations in mind. It complies with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from certain hazardous materials commonly used in the electronics industry. This commitment to sustainability makes the PUMD9,165 an environmentally responsible choice for electronic manufacturers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,080+ $0.0464 $50.1120
2,300+ $0.0435 $100.0500
3,575+ $0.0420 $150.1500
5,120+ $0.0391 $200.1920
6,650+ $0.0376 $250.0400
8,290+ $0.0362 $300.0980
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,050 pieces
MOQ: 1080 pcs
Order Increment : 1 pcs
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